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Cambridge GaN Devices Ltd

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www.camgandevices.com
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Cambridge GaN Devices: Pioneering Energy-Efficient GaN Power Solutions

Cambridge GaN Devices (CGD) is a distinguished fabless semiconductor company, a spin-out from the esteemed Cambridge University, dedicated to the design, development, and commercialization of advanced gallium nitride (GaN)-based power devices. The company's core mission revolves around enabling greener electronics and enhancing energy efficiency across a broad spectrum of applications within the power systems and energy industry.

CGD's groundbreaking innovation is the ICeGaN® technology, an industry-first enhancement-mode (eMode) GaN transistor. This proprietary platform stands out by offering state-of-the-art static and dynamic performance while ensuring increased ease-of-use and intelligent temperature control for enhanced gate reliability. A key differentiator of ICeGaN® is its ability to operate seamlessly with standard silicon gate drivers, eliminating the need for negative voltages for shutdown or complex, costly external driving and clamping interfaces. This allows ICeGaN® transistors to be integrated into designs with the familiarity and simplicity of traditional Silicon MOSFETs.

ICeGaN® power devices unlock significant performance improvements for modern power electronics. They enable operation at much higher switching frequencies with substantially lower losses and reduced on-resistance compared to conventional silicon devices, leading to energy savings of up to 50%. Furthermore, by facilitating compact power topologies, ICeGaN® technology contributes to the creation of electronic systems that are more than twice as small and significantly lighter. CGD offers product portfolios tailored for both low-power and high-power applications, driving advancements in power density and efficiency critical for the ongoing global electrification efforts.

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